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LES400H12A8L-2M

  • High power density with Trench FS IGBT technology

  • Low VCE(sat) 

  • Parallel operation enabled ;  symmetrical design & positive temperature coefficient

  • Low inductance design

  • Integrated NTC temperature sensor

  • Isolated baseplate using DBC technology

  • Compact and robust design with molded terminals


Purchase Consultation

Application

  • High-Power Converters

  • Motor Drives

  • Servo Drives

  • UPS Systems

  • Wind Turbines

  • Inverters

  • EV

Internal Circuit Diagram

Specification Parameters

TYPEVBR
Volts		VGS(th)
Volts		ID
Amps		RDS(on)
mΩ		IDSS
uA		TJRth(JC)
K/W		Ptot
Watts		CircuitPackageTechnology
LES400H12A8L-2M1200V 3.2V400A3.7mΩ200uA175℃0.0642230W2 PackECDUAL3SIC MOSFET
LES650H12A8L-2M1200V 3.2V650A2.2mΩ200uA175℃0.0643200W2 PackSIC MOSFET


Industry Applications

  • Industrial Control
  • New Energy Vehicles
  • Rail Transit
  • Smart Grid
  • Photovoltaics

    • BYSM Continues to Deepen its Efforts in the Field of High-end Precision Components
    Building a National Brand and Linking the World with Intelligent Technology

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