Product

Products

LWS400H12A8L

  • Low switching losses

  • Low VCEsat

  • Low Inductance internal structure

  • Unrivaled robustness

  • VCEsat  with positive temperature coefficient


Application

  • Servo Drives

  • Solar Applications

  • UPS Systems

  • Motor Drives

  • High Power Converters

  • Commercial Agricultural Vehicles

  • Three-Level Applications

Internal Circuit Diagram

Specification Parameters

TYPEVBR
Volts
VGS(th)
Volts
ID
Amps
RDS(on)
IDSS
uA
TJPtot
Watts
CircuitPackageTechnology
LWS120H12A8L1200V 2.0V120A19.5mΩ200uA175℃828W2 Pack62mm(B)SIC MOSFET
LWS250H12A8L1200V 3.2V250A5.6mΩ200uA175℃1450W2 PackSIC MOSFET
LWS400H12A8L1200V 3.2V400A3.7mΩ200uA175℃2027W2 PackSIC MOSFET


Industry Applications

BYSM Continues to Deepen its Efforts in the Field of High-end Precision Components
Building a National Brand and Linking the World with Intelligent Technology

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